Problem on Channel Length Modulation of MOSFET - GATE ECE 2013 Solved paper (Electron Devices) HD

In a MOSFET operating in saturation region, the channel length modulation effect causes, An increase in gate source capacitance A decrease in transconductance A decrease in unity gain bandwidth product A decrease in output resistance gate EC (electronics and communications engineering) 2013 problems and solutions electron devices analog circuits digital circuits 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 1993 1992 1991 1990 video solutions to one mark and two mark questions complete video solutions to previous gate papers 1990 to 2013 semiconductors, intrinsic and extrinsic, hall effect, mass action law, drift and diffusion, low level injection, injecting minority carrier charge, pn junction, diode characteristics,ideal diode , equivalent diode models, dynamic and static resistance, small signal diode circuits, diffusion capacitance, drift capacitance,parasitic capacitance,energy band diagram of diode and pn junction, diode current equation, diode voltage,bipolar junction transistor, bjt, bjt construction, emitter, base, collector, forward bias, reverse bias, region of operation of transistor or bjt, saturation region, active or linear region,cutoff region, inverse active region, bjt as a switch, transistor as switch, transistor as amplifier, finding the region of operation of transistor, v i characteristics of transistor, common base, common emitter, common collector, CB, CC, CE amplifier,applications of bjt, comparison of CB, CC and CE , icbo, iceo, reverse saturation current, effect of temprature on diode characteristics, bjt characteristics, base transport factor,emitter junction efficiency, CB current gain, CE emitter current gain, CC current gain, relation between current gains of CB, CC and CE, operation of PNP transistor, operation of NPN transistor, symbol of NPN, symbol of PNP , symbol of Diode, symbol of JFET, symbol of MOSFET,operation of junction field effect transistor, metal oxide semiconductor , field effect transistor,pinch off voltage, gate , drain, source, substrate or body or bulk,common drain, common gate, common source,amplifier,triode or linear region, saturation or constant current region, velocity saturation region, sio2 , enhancement mode, depletion mode, n channel , p channel, channel length modulation, body effect, threshold voltage, knee voltage, cut in voltage, voltage variable resistor, current mirror, current sink, current source, pmos , nmos, pmosfet, nmosfet, vi characteristics,diode connected mosfet, drain current, gate source voltage, drain source voltage, condition for saturation region, condition for active or linear or triode region, transconductance, output resistance, voltage gain, ic fabrication, oxidation , diffusion , ion implantation, wet oxidation, dry oxidation, photo lithography,